| DOI | Trouver le DOI : https://doi.org/10.1016/S0254-0584(03)00228-1 |
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| Auteur | Rechercher : Ko, Chun-Te1; Rechercher : Su, Y.; Rechercher : Chang, Shoude2; Rechercher : Tsai, T.; Rechercher : Kuan, T.; Rechercher : Lan, W.; Rechercher : Lin, J.; Rechercher : Lin, W.; Rechercher : Cherng, Y.; Rechercher : Webb, James3 |
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| Affiliation | - Conseil national de recherches du Canada. Initiative en génomique et en santé du CNRC
- Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
- Conseil national de recherches du Canada. Institut Steacie des sciences moléculaires du CNRC
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| Format | Texte, Article |
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| Sujet | Epitaxial lateral overgrowth (ELO); Etch pits density (EPD); GaN; Metalorganic vapor phase epitaxy (MOVPE) |
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| Résumé | A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520??C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along direction, it was found that an 8?min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480?nm and an etch pits density (EPD) of 1.6?107?cm-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample. |
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| Date de publication | 2003-09-28 |
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| Dans | |
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| Numéro NPARC | 12338178 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | c722dcce-ca11-44d9-87da-119c1c0a6e07 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-02 |
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