| DOI | Resolve DOI: https://doi.org/10.1557/PROC-446-151 |
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| Author | Search for: Belkouch, S.1; Search for: Landheer, D.1; Search for: Taylor, R.1; Search for: Rajesh, K.1; Search for: Sproule, G. I.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1996 MRS Fall Meeting: Amorphous and Crystalline Insulating Thin Films, December 2-4, 1996, Boston, Massachusetts, U.S.A. |
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| Abstract | Silicon nitride films have been deposited with a single-magnet electron-resonance deposition system using nitrogen and silane as the reaction gases at substrate temperatures of 110°C and 300°C. The films are slightly nitrogen-rich with no measurable Si-H bonds measurable by Fourier Transform infrared spectroscopy and the concentration of hydrogen present as N-H bonds increases with increasing SiH4/N2. The stress levels in the films can be controlled from tensile to compressive by decreasing the SiH4/N2 flow ratio and very low stress can be obtained with N-H bond concentrations of 4 at. %. The optical bandgap for the layer with the lowest stress value (-11.5 MPa), deposited at 300°C was 4.9 eV, as determined from a taue plot, and the waveguide loss at 632.8 nm was 2.3 dB/cm for 500 nm thick film deposited on fused silica. |
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| Publication date | 1997 |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12328797 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c769d491-f0c1-461a-a485-eb70ed3cfa06 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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