| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-446-151 |
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| Auteur | Rechercher : Belkouch, S.1; Rechercher : Landheer, D.1; Rechercher : Taylor, R.1; Rechercher : Rajesh, K.1; Rechercher : Sproule, G. I.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1996 MRS Fall Meeting: Amorphous and Crystalline Insulating Thin Films, December 2-4, 1996, Boston, Massachusetts, U.S.A. |
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| Résumé | Silicon nitride films have been deposited with a single-magnet electron-resonance deposition system using nitrogen and silane as the reaction gases at substrate temperatures of 110°C and 300°C. The films are slightly nitrogen-rich with no measurable Si-H bonds measurable by Fourier Transform infrared spectroscopy and the concentration of hydrogen present as N-H bonds increases with increasing SiH4/N2. The stress levels in the films can be controlled from tensile to compressive by decreasing the SiH4/N2 flow ratio and very low stress can be obtained with N-H bond concentrations of 4 at. %. The optical bandgap for the layer with the lowest stress value (-11.5 MPa), deposited at 300°C was 4.9 eV, as determined from a taue plot, and the waveguide loss at 632.8 nm was 2.3 dB/cm for 500 nm thick film deposited on fused silica. |
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| Date de publication | 1997 |
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| Série | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12328797 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | c769d491-f0c1-461a-a485-eb70ed3cfa06 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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