| DOI | Resolve DOI: https://doi.org/10.1063/1.117787 |
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| Author | Search for: He, J-J; Search for: Charbonneau, Sylvain1; Search for: Poole, Philip1; Search for: Aers, Geoffrey1; Search for: Feng, Y.; Search for: Koteles, E.; Search for: Goldberg, R.; Search for: Mitchell, I. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | AMPLIFIERS; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTEGRATED OPTICS; ION IMPLANTATION; PHOSPHORUS IONS; QUANTUM WELLS; SEMICONDUCTOR LASERS |
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| Abstract | A polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple quantum well (MQW) laser structure operating at 1.5 μm has been fabricated through vacancy enhanced quantum well intermixing using broad area, high energy (1 MeV P + ) ion implantation. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, bringing the two bands together. Current-voltage measurements indicate that junction characteristics are well maintained after implantation. This simple technique for fabricating polarization insensitive optical amplifiers is readily extended to the monolithical integration of such devices along with other passive and active optoelectronic devices and opens the door to practical photonic integrated circuits. |
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| Publication date | 1996-07-22 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12339192 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c8125e39-342d-40ef-8050-96810862bb00 |
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| Record created | 2009-09-11 |
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| Record modified | 2023-05-10 |
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