| DOI | Trouver le DOI : https://doi.org/10.1063/1.117787 |
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| Auteur | Rechercher : He, J-J; Rechercher : Charbonneau, Sylvain1; Rechercher : Poole, Philip1; Rechercher : Aers, Geoffrey1; Rechercher : Feng, Y.; Rechercher : Koteles, E.; Rechercher : Goldberg, R.; Rechercher : Mitchell, I. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | AMPLIFIERS; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTEGRATED OPTICS; ION IMPLANTATION; PHOSPHORUS IONS; QUANTUM WELLS; SEMICONDUCTOR LASERS |
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| Résumé | A polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple quantum well (MQW) laser structure operating at 1.5 μm has been fabricated through vacancy enhanced quantum well intermixing using broad area, high energy (1 MeV P + ) ion implantation. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, bringing the two bands together. Current-voltage measurements indicate that junction characteristics are well maintained after implantation. This simple technique for fabricating polarization insensitive optical amplifiers is readily extended to the monolithical integration of such devices along with other passive and active optoelectronic devices and opens the door to practical photonic integrated circuits. |
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| Date de publication | 1996-07-22 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12339192 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | c8125e39-342d-40ef-8050-96810862bb00 |
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| Enregistrement créé | 2009-09-11 |
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| Enregistrement modifié | 2023-05-10 |
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