| DOI | Resolve DOI: https://doi.org/10.1063/1.363363 |
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| Author | Search for: Roth, A. P.1; Search for: Lévesque, P.1; Search for: Syme, R. W. G.1; Search for: Lockwood, D. J.1; Search for: Aers, G. C.1; Search for: Rao, T. S.1; Search for: Lacelle, C.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACE STRUCTURE; PHOTOLUMINESCENCE; QUANTUM WELLS; RAMAN SPECTRA; THICKNESS; XRD |
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| Abstract | Several multiquantum wells of InP/GaxIn1−xAsyP1−y grown by chemical‐beam epitaxy have been studied by high‐resolution x‐ray diffraction, low‐temperature photoluminescence, and Raman scattering to characterize interfacial layers between the barriers and the wells. These interfacial layers are created during the initial stage of growth of the quaternary material as a result of the longer transient for the saturation of the group‐III elements flux. The combination of x‐ray diffraction and photoluminescence allows a precise determination of the interfacial layer thickness and composition grading and shows that interface roughness is of the order of 1 monolayer. Raman scattering confirms these results and is used to determine values of the sound velocity and of the index of refraction in the quaternary alloy material. |
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| Publication date | 1996-10-01 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12329099 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c93d5e10-55fb-4fa4-bc9a-bf9efde238c3 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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