| DOI | Trouver le DOI : https://doi.org/10.1063/1.363363 |
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| Auteur | Rechercher : Roth, A. P.1; Rechercher : Lévesque, P.1; Rechercher : Syme, R. W. G.1; Rechercher : Lockwood, D. J.1; Rechercher : Aers, G. C.1; Rechercher : Rao, T. S.1; Rechercher : Lacelle, C.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACE STRUCTURE; PHOTOLUMINESCENCE; QUANTUM WELLS; RAMAN SPECTRA; THICKNESS; XRD |
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| Résumé | Several multiquantum wells of InP/GaxIn1−xAsyP1−y grown by chemical‐beam epitaxy have been studied by high‐resolution x‐ray diffraction, low‐temperature photoluminescence, and Raman scattering to characterize interfacial layers between the barriers and the wells. These interfacial layers are created during the initial stage of growth of the quaternary material as a result of the longer transient for the saturation of the group‐III elements flux. The combination of x‐ray diffraction and photoluminescence allows a precise determination of the interfacial layer thickness and composition grading and shows that interface roughness is of the order of 1 monolayer. Raman scattering confirms these results and is used to determine values of the sound velocity and of the index of refraction in the quaternary alloy material. |
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| Date de publication | 1996-10-01 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12329099 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | c93d5e10-55fb-4fa4-bc9a-bf9efde238c3 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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