In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient ohmic contact formation
In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient ohmic contact formation
DOI | Resolve DOI: https://doi.org/10.1063/1.1543233 |
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Author | Search for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1 |
Affiliation |
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Format | Text, Article |
Publication date | 2003 |
In | |
Language | English |
NPARC number | 12333616 |
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Record identifier | cf834be7-2a46-46dc-a9e8-fcfd6d704cad |
Record created | 2009-09-10 |
Record modified | 2020-04-02 |
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