| Author | Search for: Grant, P. D.1; Search for: Mansour, R. R.; Search for: Denhoff, M. W.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | This paper addresses the fundamentals of RF switches, providing a comparison between semiconductor and RF microelectromechanical systems (MEMS) switches. The basis of comparison is introduced by defining a figure of merit that is a function of the off-state capacitance and the on-state resistance. A simple transmission-line model is presented to illustrate the impact of the switch off-state capacitance on the switch isolation and frequency range of operation. The figure-of-merit analysis given in this paper demonstrates that RF MEMS switches have superior insertion loss and isolation performance compared to MESFET and p-i-n diode switches. The paper also addresses several other design considerations besides insertion loss and isolation for selecting the right RF switch. A discussion is included on the potential use of RF MEMS switches in satellite and wireless applications. |
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| Publication date | 2002 |
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| Publisher | IEEE |
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| In | |
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| Related publication | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12743969 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d04b4a4c-8e6a-401f-88e3-3cbd5641adcb |
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| Record created | 2009-10-27 |
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| Record modified | 2023-11-07 |
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