| DOI | Resolve DOI: https://doi.org/10.1049/el.2010.3543 |
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| Author | Search for: Yang, Y.1; Search for: Liu, H.C.1; Search for: Shen, W.Z.; Search for: Gupta, J.A.1; Search for: Luo, H.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z.R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | GaAs/AlGaAs; Near infra red; P-i-n photodetectors; Room temperature; Up-conversion; Wafer fusion; Gallium alloys; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Semiconducting gallium; Infrared devices |
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| Abstract | Reported for the first time is a full GaAs-based room-temperature near-infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light-emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6m were up-converted to 0.87m. © 2011 The Institution of Engineering and Technology. |
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| Publication date | 2011 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271208 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d093a160-588e-4229-ba9a-50d1821f5d6a |
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| Record created | 2014-03-24 |
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| Record modified | 2020-04-21 |
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