| DOI | Resolve DOI: https://doi.org/10.1109/ICIPRM.2002.1014493 |
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| Author | Search for: Poole, P. J.1; Search for: Allen, C.Ni.1; Search for: Marshall, P.1; Search for: Fraser, J.1; Search for: Moisa, S.1; Search for: Raymond, S.1; Search for: Fafard, S.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Sponsor | Search for: IEEE Electron Devices Society; Search for: LEOS (IEEE) |
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| Format | Text, Article |
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| Conference | 14th Indium Phosphide and Related Materials Conference : IPRM, 12-16 May 2002, Stockholm, Sweden |
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| Abstract | Quantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 × 1010 cm-2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm × 150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature. |
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| In | |
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| Language | English |
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| NPARC number | 12346363 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d09674a4-0593-4f24-88cc-b9a32ad50d52 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-04-16 |
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