| Download | - View author's version: Second harmonic generation in InGaAsP waveguides at 1.3 μm wavelength (PDF, 26.2 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.108316 |
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| Author | Search for: Cada, M.; Search for: Svilans, M.; Search for: Janz, S.1; Search for: Bierman, R.; Search for: Normandin, R.1; Search for: Glinski, J. |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Abstract | We report the first surface emission of red light from an InGaAs waveguide, generated by the nonlinear mixing of two counterpropagating guided waves at wavelengths around 1.3 μm. A nine layer InGaAsP/InP heterostructure was grown by low pressure MOCVD on 〈100〉 InP substrate. All layers were n‐doped with silicon to a level of 1.0×1017 cm−3. The structures functioned in both planar as well as ridge waveguide configurations. Measurements were performed with both a YAG laser and a semiconductor laser in the pulsed as well as the cw regime and were compared with theoretical calculations, used in the design of the structure. Red light was detected even in a single slab InGaAsP waveguide with a cw semiconductor laser diode. |
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| Publication date | 1992-10-26 |
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| Publisher | AIP Publishing |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003869 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | da8f7fc7-e753-4bc4-957f-91fe4f40516b |
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| Record created | 2018-08-17 |
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| Record modified | 2020-04-23 |
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