| Téléchargement | - Voir la version de l’auteur : Second harmonic generation in InGaAsP waveguides at 1.3 μm wavelength (PDF, 26.2 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1063/1.108316 |
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| Auteur | Rechercher : Cada, M.; Rechercher : Svilans, M.; Rechercher : Janz, S.1; Rechercher : Bierman, R.; Rechercher : Normandin, R.1; Rechercher : Glinski, J. |
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| Affiliation | - Conseil national de recherches du Canada
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| Format | Texte, Article |
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| Résumé | We report the first surface emission of red light from an InGaAs waveguide, generated by the nonlinear mixing of two counterpropagating guided waves at wavelengths around 1.3 μm. A nine layer InGaAsP/InP heterostructure was grown by low pressure MOCVD on 〈100〉 InP substrate. All layers were n‐doped with silicon to a level of 1.0×1017 cm−3. The structures functioned in both planar as well as ridge waveguide configurations. Measurements were performed with both a YAG laser and a semiconductor laser in the pulsed as well as the cw regime and were compared with theoretical calculations, used in the design of the structure. Red light was detected even in a single slab InGaAsP waveguide with a cw semiconductor laser diode. |
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| Date de publication | 1992-10-26 |
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| Maison d’édition | AIP Publishing |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23003869 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | da8f7fc7-e753-4bc4-957f-91fe4f40516b |
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| Enregistrement créé | 2018-08-17 |
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| Enregistrement modifié | 2020-04-23 |
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