| Download | - View final version: Uniformity measurements of large-area indium gallium arsenide and germanium photodetectors (PDF, 4.4 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1088/1742-6596/1065/8/082010 |
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| Author | Search for: Sibley, Allison1; Search for: Gamouras, Angela1; Search for: Todd, Andrew D. W.1 |
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| Affiliation | - National Research Council of Canada. Metrology Research Centre
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| Format | Text, Article |
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| Conference | IMEKO 2018 - XXII World Congress of the International Measurement Confederation, September 3–6, 2018, Belfast, United Kingdom |
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| Abstract | The properties of six large area semiconductor photodetectors were investigated in the near infrared wavelength range. For potential use as transfer standard detectors in absolute spectral responsivity calibrations, the spatial uniformity and spectral responsivity of four InGaAs and two Ge photodiodes were characterized. Spatial uniformity measurements carried out at 1000 nm, 1550 nm, and 1650 nm show that photodiode spatial non-uniformity changes with wavelength for both InGaAs and Ge detectors. The photodiode characterization apparatus, results, and analysis are presented. |
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| Publication date | 2018-11-13 |
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| Publisher | IOP |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | dba53bc7-9c1d-4a73-acbc-bc585a2b67bd |
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| Record created | 2020-01-28 |
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| Record modified | 2020-05-30 |
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