| Téléchargement | - Voir la version finale : Uniformity measurements of large-area indium gallium arsenide and germanium photodetectors (PDF, 4.4 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1088/1742-6596/1065/8/082010 |
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| Auteur | Rechercher : Sibley, Allison1; Rechercher : Gamouras, Angela1; Rechercher : Todd, Andrew D. W.1 |
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| Affiliation | - Conseil national de recherches du Canada. Centre de recherche en métrologie
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| Format | Texte, Article |
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| Conférence | IMEKO 2018 - XXII World Congress of the International Measurement Confederation, September 3–6, 2018, Belfast, United Kingdom |
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| Résumé | The properties of six large area semiconductor photodetectors were investigated in the near infrared wavelength range. For potential use as transfer standard detectors in absolute spectral responsivity calibrations, the spatial uniformity and spectral responsivity of four InGaAs and two Ge photodiodes were characterized. Spatial uniformity measurements carried out at 1000 nm, 1550 nm, and 1650 nm show that photodiode spatial non-uniformity changes with wavelength for both InGaAs and Ge detectors. The photodiode characterization apparatus, results, and analysis are presented. |
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| Date de publication | 2018-11-13 |
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| Maison d’édition | IOP |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | dba53bc7-9c1d-4a73-acbc-bc585a2b67bd |
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| Enregistrement créé | 2020-01-28 |
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| Enregistrement modifié | 2020-05-30 |
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