| DOI | Resolve DOI: https://doi.org/10.1088/0957-4484/22/23/235704 |
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| Author | Search for: Marshall, Gregory M.1; Search for: Lopinski, Gregory P.2; Search for: Bensebaa, Farid1; Search for: Dubowski, Jan J. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Chemical Process and Environmental Technology
- National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Abstract | The electro-optic characteristics of the semi-insulating and n⁺ -type GaAs(001) surfaces passivated with n-alkanethiol self-assembled monolayers were investigated using Kelvin probe surface photovoltage (SPV) and photoluminescence (PL) techniques. Referencing the equilibrium surface barrier height established in an earlier report, SPV measurements demonstrated a significant (>100 mV) increase in the non-equilibrium band-bending potential observed under low-level photo-injection. Modeling of the SPV accounts for these observations in terms of a large (>10⁴) decrease in the hole/electron ratio of surface carrier capture cross-sections, which is suggested to result from the electrostatic potential of the interfacial dipole layer formed upon thiol chemisorption. The cross-section effects are verified in the high-injection regime based on carrier transport modeling of the PL enhancement manifested as a reduction of the surface recombination velocity. |
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| Publication date | 2011-04-14 |
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| Publisher | IOP |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | NRCC 53017 |
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| NPARC number | 20607214 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | e09495d0-4fff-4058-b652-56b942c6df5d |
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| Record created | 2012-09-14 |
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| Record modified | 2021-07-30 |
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