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Scanning voltage microscopy on active semiconductor lasers: the impact of doping profile near an epitaxial growth interface on series resistance

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/JQE.2004.828262
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • IEEE Journal of Quantum Electronics 40, no. 6 (2004): 651–655.
NPARC number12744366
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Record identifiere634714c-747e-4310-aa78-9876827457be
Record created2009-10-27
Record modified2020-04-17
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