A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers
A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers
DOI | Resolve DOI: https://doi.org/10.1109/2944.401201 |
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Author | Search for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: ; Search for: |
Affiliation |
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Format | Text, Article |
Subject | aluminium compounds; diffusion; drift-diffusion equations; GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers; GaAs-AlGaAs; gallium arsenide; gradient index optics; GRINSCH; III-V semiconductors; laser theory; MQW lasers; multiple quantum-well; optimum number; quantum well lasers; quantum well number; semiconductor device models; sensitivity; temperature sensitivity; temperature-dependent factors; temperature-dependent model; well-number behavior |
Abstract | |
Publication date | 1995 |
In | |
Language | English |
NPARC number | 12327982 |
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Record identifier | e9b506c7-7ffe-4fdc-b837-7c35685816ca |
Record created | 2009-09-10 |
Record modified | 2020-04-29 |
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