| DOI | Resolve DOI: https://doi.org/10.1063/1.4813560 |
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| Author | Search for: Mala, S. A.; Search for: Tsybeskov, L.; Search for: Lockwood, D. J.1; Search for: Wu, X.2; Search for: Baribeau, J.-M.2 |
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| Affiliation | - National Research Council of Canada. Measurement Science and Standards
- National Research Council of Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Subject | Excitation energy density; Hetero-interfaces; Output intensity; PL property; Si/SiGe; Germanium; Multilayers; Silicon alloys; Photoluminescence |
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| Abstract | An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm^2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces. |
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| Publication date | 2013-07-15 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21270368 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | eeb36ef8-8678-498e-b08d-d7a39e618988 |
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| Record created | 2014-02-05 |
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| Record modified | 2020-04-22 |
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