| DOI | Resolve DOI: https://doi.org/10.1016/S0013-4686(00)00610-1 |
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| Author | Search for: Allongue, Philippe; Search for: Henry de Villeneuve, Catherine; Search for: Morin, Sylvie1; Search for: Boukherroub, Rabah1; Search for: Wayner, Danial D. M.1 |
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| Affiliation | - National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Subject | AFM; Etching; Flat H-Si(111) surface; Mechanism |
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| Abstract | The reasons why ideally flat H-Si(111) surface can be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations. |
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| Publication date | 2000-10-13 |
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| In | |
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| Language | English |
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| NPARC number | 12328350 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | f15b1512-bb8b-4733-bee9-390748399f88 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-26 |
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