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AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/EDSSC.2007.4450115
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • IEEE Electron Device Letters 29 (2008): 275–278.
NPARC number12744231
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Record identifierf565daf3-7dd6-489c-a698-b3052390bc97
Record created2009-10-27
Record modified2020-04-15
Date modified: