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Image transformation in integrated quantum well infrared photodetector-light emitting diode

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.365922
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectinfrared detectors; integrated optoelectronics; light emitting diodes; semiconductor quantum wells
Abstract
We present an analysis of physical effects responsible for infrared image transformation in integrated quantum well infrared photodetector-light emitting diode (QWIP-LED). For a large-area device, the spatial smearing of the transformed image is determined by the lateral photocurrent spreading in the QWIP and the lateral diffusion of carriers injected into the LED. For devices with low QWIP photocurrent gain, the spatial resolution is limited by the carrier diffusion lengths in the QWIP and in the LED active region, which are much shorter than radiation wavelength, and hence, the transformed image is practically undistorted.
Publication date
In
  • Journal of Applied Physics 82, no. 3 (1997): 1446–1449.
LanguageEnglish
NPARC number12327808
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Record identifierf735c7de-158a-450d-addf-7cf756ba51c2
Record created2009-09-10
Record modified2020-03-20
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