| DOI | Resolve DOI: https://doi.org/10.1063/1.5002630 |
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| Author | Search for: Niemeyer, M.; Search for: Ohlmann, J.; Search for: Walker, A. W.1; Search for: Kleinschmidt, P.; Search for: Lang, R.; Search for: Hannappel, T.; Search for: Dimroth, F.; Search for: Lackner, D. |
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| Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Abstract | Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ 0.53 by cathodoluminescence and time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority carrier mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant minority carrier diffusion length of (5.0 ± 0.7) μm and a constant lifetime of (3.7 ± 0.7) ns for an In-content up to 21%. Lower doped samples (3 × 1017 cm−3), on the other hand, show an increase in minority carrier diffusion length and lifetime with In-content from (6.3 ± 0.2) μm and (6.2 ± 0.5) ns respectively for GaAs to (14 ± 2) μm and (24.4 ± 0.5) ns respectively for Ga0.79In0.21As. Increasing the In-content to 53% results in a drop in the minority carrier diffusion length independently of the p-doping concentration .This is interpreted as a change in the energy of the Shockley-Read-Hall trap levels within the bandgap as a function of indium concentration. |
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| Publication date | 2017-09-21 |
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| Publisher | AIP Publishing |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003206 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | fc217bf0-c0ac-4b5a-984d-5526d35bfe9f |
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| Record created | 2018-05-07 |
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| Record modified | 2020-03-16 |
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