| DOI | Trouver le DOI : https://doi.org/10.1063/1.5002630 |
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| Auteur | Rechercher : Niemeyer, M.; Rechercher : Ohlmann, J.; Rechercher : Walker, A. W.1; Rechercher : Kleinschmidt, P.; Rechercher : Lang, R.; Rechercher : Hannappel, T.; Rechercher : Dimroth, F.; Rechercher : Lackner, D. |
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| Affiliation | - Conseil national de recherches du Canada. Électronique et photonique avancées
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| Format | Texte, Article |
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| Résumé | Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ 0.53 by cathodoluminescence and time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority carrier mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant minority carrier diffusion length of (5.0 ± 0.7) μm and a constant lifetime of (3.7 ± 0.7) ns for an In-content up to 21%. Lower doped samples (3 × 1017 cm−3), on the other hand, show an increase in minority carrier diffusion length and lifetime with In-content from (6.3 ± 0.2) μm and (6.2 ± 0.5) ns respectively for GaAs to (14 ± 2) μm and (24.4 ± 0.5) ns respectively for Ga0.79In0.21As. Increasing the In-content to 53% results in a drop in the minority carrier diffusion length independently of the p-doping concentration .This is interpreted as a change in the energy of the Shockley-Read-Hall trap levels within the bandgap as a function of indium concentration. |
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| Date de publication | 2017-09-21 |
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| Maison d’édition | AIP Publishing |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23003206 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | fc217bf0-c0ac-4b5a-984d-5526d35bfe9f |
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| Enregistrement créé | 2018-05-07 |
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| Enregistrement modifié | 2020-03-16 |
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