| DOI | Trouver le DOI : https://doi.org/10.1063/1.115198 |
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| Auteur | Rechercher : Lu, Z. H.1; Rechercher : Chatenoud, F.1; Rechercher : Dion, M. M.1; Rechercher : Graham, M. J.1; Rechercher : Ruda, H. E.; Rechercher : Koutzarov, I.; Rechercher : Liu, Q.; Rechercher : Mitchell, C. E. J.; Rechercher : Hill, I. G.; Rechercher : McLean, A. B. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | CHEMICAL BONDS; CHLORINATION; ENERGY GAP; ETCHING; GALLIUM ARSENIDES; PASSIVATION; PHOTOEMISSION; SURFACE STATES; SURFACE TREATMENTS; XANES |
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| Résumé | It is found that an ordered and air-stable GaAs(111)A舑(1 × 1)舑Cl surface can be produced by chemical etching/passivation with dilute HCl solution. The synchrotron polarization-dependent Cl K-edge x-ray absorption near-edge structure and x-ray photoelectron spectroscopy studies showed that the surface is terminated with Ga舑Cl bonds oriented along the surface normal. Low-energy electron diffraction studies showed a bulklike (1 × 1) structure on the Cl-terminated GaAs(111)A surface. The Cl termination eliminates surface band-gap states caused by surface oxides. Photoluminescence measurements showed a dramatic increase in the near-band radiative emission rate corresponding to reduction in the occupied surface band-gap states. A reduction of surface gap states by Cl termination was confirmed by surface photovoltage measurements. |
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| Date de publication | 1995-07-31 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12328630 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 09577a29-9167-4785-9c80-541886b4a816 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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