| Téléchargement | - Voir la version finale : Guard-ring-free InGaAs/InP single-photon avalanche diode based on a novel one-step zn-diffusion technique (PDF, 3.9 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1109/JSTQE.2022.3162527 |
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| Auteur | Rechercher : Kizilkan, EkinIdentifiant ORCID : https://orcid.org/0000-0002-5183-4764; Rechercher : Karaca, UtkuIdentifiant ORCID : https://orcid.org/0000-0001-8753-3122; Rechercher : Pesic, VladimirIdentifiant ORCID : https://orcid.org/0000-0003-2911-2906; Rechercher : Lee, Myung-JaeIdentifiant ORCID : https://orcid.org/0000-0003-0475-1437; Rechercher : Bruschini, ClaudioIdentifiant ORCID : https://orcid.org/0000-0002-6636-6596; Rechercher : SpringThorpe, Anthony J.1; Rechercher : Walker, Alexandre W.1Identifiant ORCID : https://orcid.org/0000-0002-1791-2140; Rechercher : Flueraru, Costel1; Rechercher : Pitts, Oliver J.1Identifiant ORCID : https://orcid.org/0000-0002-5740-9443; Rechercher : Charbon, EdoardoIdentifiant ORCID : https://orcid.org/0000-0002-0620-3365 |
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| Affiliation | - Conseil national de recherches du Canada. Électronique et photonique avancées
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| Bailleur de fonds | Rechercher : National Research Council Canada |
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| Format | Texte, Article |
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| Sujet | InGaAs/InP; LIDAR; photon counting; single-photon avalanche diodes (SPADs); 3-D ranging; time-correlated single-photon counting (TCSPC); indium phosphide; III-V semiconductor materials; zinc; electric breakdown; electric fields; performance evaluation |
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| Résumé | This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 μ m diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300 K and 225 K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/ μ m² and it decreases to 5 cps/ μ m² at 225 K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300 K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR). |
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| Date de publication | 2022-03-25 |
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| Maison d’édition | IEEE |
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| Licence | |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 82aa50e1-34f6-4745-828c-f6cf13ea3cf4 |
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| Enregistrement créé | 2023-12-14 |
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| Enregistrement modifié | 2023-12-14 |
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