| Download | - View final version: Guard-ring-free InGaAs/InP single-photon avalanche diode based on a novel one-step zn-diffusion technique (PDF, 3.9 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1109/JSTQE.2022.3162527 |
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| Author | Search for: Kizilkan, EkinORCID identifier: https://orcid.org/0000-0002-5183-4764; Search for: Karaca, UtkuORCID identifier: https://orcid.org/0000-0001-8753-3122; Search for: Pesic, VladimirORCID identifier: https://orcid.org/0000-0003-2911-2906; Search for: Lee, Myung-JaeORCID identifier: https://orcid.org/0000-0003-0475-1437; Search for: Bruschini, ClaudioORCID identifier: https://orcid.org/0000-0002-6636-6596; Search for: SpringThorpe, Anthony J.1; Search for: Walker, Alexandre W.1ORCID identifier: https://orcid.org/0000-0002-1791-2140; Search for: Flueraru, Costel1; Search for: Pitts, Oliver J.1ORCID identifier: https://orcid.org/0000-0002-5740-9443; Search for: Charbon, EdoardoORCID identifier: https://orcid.org/0000-0002-0620-3365 |
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| Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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| Funder | Search for: National Research Council Canada |
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| Format | Text, Article |
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| Subject | InGaAs/InP; LIDAR; photon counting; single-photon avalanche diodes (SPADs); 3-D ranging; time-correlated single-photon counting (TCSPC); indium phosphide; III-V semiconductor materials; zinc; electric breakdown; electric fields; performance evaluation |
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| Abstract | This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 μ m diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300 K and 225 K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/ μ m² and it decreases to 5 cps/ μ m² at 225 K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300 K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR). |
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| Publication date | 2022-03-25 |
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| Publisher | IEEE |
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| Licence | |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 82aa50e1-34f6-4745-828c-f6cf13ea3cf4 |
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| Record created | 2023-12-14 |
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| Record modified | 2023-12-14 |
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