Growth, selectivity and adhesion of CVD-deposited copper from Cu+1 (hexafluoroacetylacetonate trimethylvinylsilane) and dichlorodimethylsilane

DOI	Trouver le DOI : https://doi.org/10.1016/0040-6090(95)06706-X
Auteur	Rechercher : Webb, James B.¹; Rechercher : Northcott, Daniel¹; Rechercher : Emesh, Ismail
Affiliation	Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
Format	Texte, Article
Sujet	Adhesion; Chemical vapour deposition; Copper; Metals
Résumé	Copper films have been deposited by low-pressure (1–20 mTorr) chemical vapour deposition using Cu1+ (hexafluoroacetylacetonate) trimethylvinylsilane onto SiO2 patterned substrates having seed layers of W, TiN and Al. Blanket deposition is observed for all growth temperatures in the range 140 °C ≤ Tg ≤ 240 °C. However, depending on the initial substrate seed layer and pre-treatment, the relative strength of the copper-oxide and copper-seed layer bond can be dramatically altered particularly when growth is carried out in the presence of dichloromethylsilane (DCDMS). The degree of selectivity as well as film morphology is also found to be sensitive to the initial pre-treatment, growth temperature and flow rate of DCDMS.
Date de publication	1995-12-01
Dans	Thin Solid Films 270, nº 1-2 (1 décembre 1995) : 483–488.
Langue	anglais
Numéro NPARC	12338529
Exporter la notice	Exporter en format RIS
Signaler une correction	Signaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement	83c6c3e9-4187-4ab1-a3c2-4a883a67fa19
Enregistrement créé	2009-09-10
Enregistrement modifié	2020-04-29

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